QS5U23 transistor 1/4 small switching (?20v, ?1.5a) QS5U23 z z z z features 1) the QS5U23 conbines pch mosfet with a schottky barrier diode in a single tsmt5 package. 2) pch mossfet have a low on-state resistance with a fast switching. 3) pch mosfet is reacted a low voltage drive(2.5v) 4) the independently connected schottky barrier diode have a low forward voltage. z applications z z z z external dimensions (units : mm) each lead has same dimensions abbreviated symbol : u23 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 4 ) 0.95 0.95 0.4 + 0.1 ? 0.05 1.9 + ? 0.2 2.9 + ? 0.1 1.6 + 0.2 ? 0.1 2.8 + ? 0.2 0.16 + 0.1 ? 0.06 0 0.1 0.3 0.6 0.7 + ? 0.1 0.85 + ? 0.1 1.0max load switch , dc/dc conversion z z z z structure silicon p-channel mosfet schottky barrier diode z z z z packaging specifications taping QS5U23 type tr 3000 package basic ordering unit (pieces) code z z z z equivalent circuit (1) ? 1 esd protection diode (1)anode (2)source (3)gate (4)drain (5)cathode (2) (3) (4) (5) ? 2 body diode ? 1 ? 2 z z z z absolute maximum ratings (ta=25 c) parameter v dss v gss tch i d i sp i dp symbol ? 20 12 1.5 6.0 ? 0.75 ? 3.0 150 limits unit drain ? source voltage gate ? source voltage drain current source current channel temperature continuous pulsed continuous pulsed i s < mosfet > < di > repetitive peak reverse voltage reverse voltage forward current forward current surge peak v rm v r i f i fsm tj 30 20 0.5 2.0 125 pw < = < = 10 < mosfet and di > s, duty cycle 1% 60hz / 1cyc total power dissipation range of strage temperature p d tstg 1.0 ? 40 125 w / total mounted on a ceramic board v v a a c a a v v a a c c (body diode) pw < = < = 10 s, duty cycle 1% junction temperature
QS5U23 transistor 2/4 z z z z electrical characteristics (ta=25 c) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss y fs c oss c rss min. ? ? 20 ? ? 0.7 ? ? 1.0 ? ? ? ? ? ? 160 325 ? 60 40 10 ? ? 1 ? 2.0 200 ? 260 340 ? ? ? ? av gs = 12v / v ds = 0v i d = ? 1ma / v gs = 0v v ds = ? 20v / v gs = 0v v ds = ? 10v, i d = ? 0.75a v ds = ? 10v / i d = ? 1ma i d = ? 1.5a, v gs = ? 4.5v i d = ? 0.75a, v gs = ? 2.5v v ds = ? 10v v gs = 0v f = 1mhz v a v m ? m ? pf s pf pf t d(on) ? 10 ? i d = ? 0.75a ns t r ? 4.2 ? nc t d(off) ? 1.0 ? nc t f ? 1.1 ? nc typ. max. unit conditions gate-source leakage gate threshold voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn ? on delay time turn off delay time gate ? drain charge fall time drain-source breakdown voltage static drain ? source on ? state resistance zero gate voltage drain current ? pulsed ? 180 240 m ? i d = ? 1.5a, v gs = ? 4v ? pulsed ? pulsed rise time ? pulsed ? pulsed ? pulsed total gate charge 10 35 10 ns ns ns v dd v gs = ? 4.5 v r l = 20 ? r gs = 10 ? qg qgs qgd gate ? source charge < mosfet > < mosfet > body diode(source ? drain) forward voltage vsd ? ? ? ? ? ? ? ? ? 1.2 v i s = ? 0.75a / v gs = 0v < di > foward voltage drop reverse leakage v f i r ? ? ? ? ? ? 0.36 0.47 100 v v a i f = 0.1a i f = 0.5a v r = 20v v gs = ? 4.5 v i d = ? 1.5a v dd ? 1 5v ? 15
QS5U23 transistor 3/4 z z z z electrical characteristic curves fig.1 typical transfer characteristics 0 0.5 1.0 0.001 0.1 1 0.01 10 1.5 gate ? source voltage : v gs [ v ] drain current : ? i d (a) 2.0 2.5 3.0 3.5 4.0 ta = 125 c 75 c 25 c ? 25 c v ds =? 10v pulsed fig.2 static drain ? source on ? state resistance 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance 75 c 25 c ? 25 c ta=125 c r ds ( on )[ m ?] vs. drain current v gs =? 4.5v pulsed fig.3 static drain ? source on ? state resistance 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance r ds ( on )[ m ?] vs. drain current ta=125 c 75 c 25 c ? 25 c v gs =? 4v pulsed fig.4 static drain ? source on ? state 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance ta=125 c 75 c 25 c ? 25 c r ds ( on )[ m ?] resistance vs. drain ? current v gs =? 2.5v pulsed 10 012 8 4 26 0 static drain ? source on ? state resistance gate ? source voltage : ? v gs [ v ] 50 100 150 200 250 300 350 400 i d= ? 0 . 75a ? 1 . 5a r ds ( on ) [m ? ] fig.5 static drain ? source on ? state resistance vs.gate ? source voltage ta = 25 c pulsed fig.6 static drain ? source on ? state 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain-source on ? state resistance resistance vs. drain current r ds ( on )[ m ?] vgs= ? 2 . 5v ? 4 . 0v ? 4 . 5v ta = 25 c pulsed 0 0.5 1.0 1.5 source ? drain voltage : ? v sd [ v ] fig.7 reverse drain current 0.01 reverse drain current : ? i dr [ a ] 0.1 10 1 2.0 ta=125 c 75 c 25 c ? 25 c vs. source-drain current v gs = 0v pulsed 0.01 0.1 1 10 100 drain ? source voltage : ? v ds [ v ] fig.8 typical capactitance 10 100 10000 1000 vs. drain ? source voltage capacitance : c [ pf ] ciss coss crss ta = 25 c f = 1mhz v gs = 0v 0.01 0.1 1 10 drain current : ? i d [ a ] fig.9 switching characteristics 1 10 1000 100 td ( off ) td ( on ) tr tf switching time : t [ ns ] ta = 25 c v dd =? 15v v gs =? 4.5v r g = 10 ? pulsed
QS5U23 transistor 4/4 fig.10 dynamic input characteristics 01 0 4 8 6 total gate charge : qg [ nc ] gate-source voltage: -v gs [ v ] 2345 1 2 3 5 6 7 ta = 25 c v dd =? 15v i d =? 1.5a r g = 10 ? pulsed forward voltage : v f [ v ] fig.11 forward temperature characteristics forward current : i f [ ma ] 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 ta=125 c 75 c 25 c ? 25 c reverse voltage : v r [ v ] fig.12 reverse temperature characteristics reverse current : i r [ a ] 0.0001 0.001 0.01 0.1 100 10 1 010203040 125 c 75 c 25 c ? 25 c z z z z measurement circuits fig.13 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 10% 90% 10% 10% v gs v ds 90% t f t off t d(off) t r t on t d(on) fig.14 switching waveforms 50% 50% pulse width fig.15 gate charge measurement circuit v gs r g v ds d.u.t. i d r l v dd i g (const) fig.16 gate charge waveforms v gs qg qgs qgd v g charge
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